Transistor 2N3906
- Type Designator: 2N3906
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation (Pc): 0.31 W
- Maximum Collector-Base Voltage |Vcb|: 40 V
- Maximum Collector-Emitter Voltage |Vce|: 40 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 0.2 A
- Max. Operating Junction Temperature (Tj): 135 °C
- Transition Frequency (ft): 250 MHz
- Collector Capacitance (Cc): 5 pF
- Forward Current Transfer Ratio (hFE), MIN: 100
- Package: TO92